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Electrical Applications Excellent Ma
Aluminum Nitride ceramic has a coefficient of thermal expansion and electrical insulation properties that closely matches that of Silicon wafer material,
Aluminum Nitride (AlN) Features:
High Thermal Conductivity And Electrical Insulation Properties
AlN is a common alternative to Beryllium Oxide (BeO) in the semiconductor industry as it is not a health hazard when machined.
Aluminum Nitride ceramic has a coefficient of thermal expansion and electrical insulation properties that closely matches that of Silicon wafer material, making it an useful material for electronics applications where high temperatures and heat dissipation is often a problem.
AlN is susceptible to surface oxidization. When this happens, a layer of Aluminum Oxide forms. This does help to protect the material, however, it impacts the thermal conductivity (Alumina is ~30 W/m.K). In oxidizing atmospheres, this happens around 700°C. In inert atmospheres this layer protects the AlN up to ~1350°C. Bulk oxidation will occur at temperatures above this.